This could be useful for developing ultra-thin and customizable electronic components. But optimally connecting these materials to gate insulators is a challenge. This often results in degradation of the network interface. Transistor efficiency A global team of researchers from King Abdullah University of Science and Technology (KAUST), Soochow University and other institutions have presented an innovative approach to produce transistors with better performance using 2D semiconductors using hexagonal boron nitride (h-BN) dielectrics. Energy also Based on their findings, the researchers discovered that using platinum (Pt) as the anode significantly reduces the probability of dielectric breakdown in the h-BN stack. They designed an experiment and found that the Pt/h-BN gate-stack has a leakage current that is 500 times lower than that of Au/h-BN and has a high dielectric strength of at least 25 MV/cm under load. inspired by These results.
They built more than 1,000 devices using h-BN-deposited chemical vapors as an insulator. Their evaluations showed that h-BN gate dielectrics were most compatible with coordinated energy metals. high, such as Pt and tungsten (W) To create the transistor with the vertical Pt/h-BN/MoS2 structure, the team started by cleaning the SiO2/Si substrate using an ultrasonic bath in acetone, alcohol, and deionized water. A source drain electrode (Ti/Au ) was then applied to the substrate using electron beam lithography. After patterning, the MoS2 deposited by e-beam deposition was shifted out of the natural crystal and transferred to these electrodes to form channels. The CVD h-BN film was transferred onto
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